NTE5661 TRIAC, 10 Amp
Description: The NTE5661 is a TRIAC in a TO64 type stud mount package designed primarily for full-wave AC control applications such as light dimmers, motor controls, heating controls, power supplies or wherever full-wave silicon gate controlled solid-state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features: D Low "ON" Voltage D Gate Triggering Guaranteed in Four Modes Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (TJ = +100C, Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . 50V On-State RMS Current (TC = +75C), ITRMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak Surge Current (One Full Cycle, 60Hz, TJ = -40 to +100C), ITSM . . . . . . . . . . . . . . . . . . 100A Circuit Fusing Considerations (TJ = -40 to +100C, t = 1.0 to 8.3ms), I2t . . . . . . . . . . . . . . 40A2sec Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 in. lb. Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Peak Blocking Current (Either Direction) On-State Voltage (Either Direction) Gate Trigger Current, Continuous DC All Modes MT2 (+), G (+); MT2 (-), G (-) Gate Trigger Voltage, Continuous DC VGT VGD Holding Current (Either Direction) Turn-On Time Blocking Voltage Application Rate at Commutation IH ton dv/dt Main Terminal Voltage = 12V, RL = 100 Main Terminal Voltage = 50V, RL = 100, TJ = +100C Main Terminal Voltage = 12V, Gate Open, Initiating Current = 100mA ITM = 14A, IGT = 100mA VDRM = 50V, TJ = +75C, Gate Open Symbol IDRM VTM IGT Test Conditions VDRM = 50V, TJ = +100C, Gate Open ITM = 14A Peak Main Terminal Voltage = 12V, RL = 100 Min - - - - - 0.2 - - - Typ - 1.3 - - 0.9 - - 1.5 5.0 Max Unit 2.0 1.8 40 50 2.0 - 30 - - mA V mA mA V V mA s V/s
.431 (10.98 Max
Gate
MT1
.855 (21.7) Max
.125 (3.17) Max .453 (111.5) Max
MT2 10-32 UNF-2A
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